PART |
Description |
Maker |
K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/ |
128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格 RESISTOR, 2M OHM, 0.063W, 1%
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
V58C2128164S V58C2128804SXT8 V58C2128404SXT8 V58C2 |
HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM High performance 2.5V 128MB DDR SDRAM
|
Mosel Vitelic Corp
|
WED3EG6417S202D4 WED3EG6417S265D4 WED3EG6417S262D4 |
128MB - 16Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
K4H281638L-LCB3 K4H281638L-LCCC K4H281638L-LCCD |
128Mb L-die DDR SDRAM Specification
|
Samsung semiconductor
|
NT5DS32M4AT |
(NT5DS16M8AT / NT5DS32M4AT) 128Mb DDR SDRAM
|
Nanya Techology
|
EBD12RB8ALFA-1A EBD12RB8ALFA-75 EBD12RB8ALFA-7A EB |
128MB Registered DDR SDRAM DIMM
|
Elpida Memory
|
K4H280838F-ULB3 K4H280438F-UC K4H280438F-UCA0 K4H2 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
HYMD216646AL6-K HYMD216646AL6-H HYMD216646A6-H HYM |
Unbuffered DDR SDRAM DIMM 16Mx64|2.5V|M/K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM - 256Mb 64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
Z84C00 Z8400 Z0840008VEC Z0840006VEC |
NMOS/CMOS Z80 CPU CENTRAL PROCESSING UNIT MEMORY, SDRAM, DDR, 128MB, 8MX16, TSOP-66 Microprocessor
|
Zilog.
|